Blue vertical cavity surface emitting laser

Coherent light generators – Particular resonant cavity – Distributed feedback

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H01S 308

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active

061608335

ABSTRACT:
The present invention provides an independently addressable, vertical cavity surface emitting laser ("VCSEL") in the blue wavelength range of 390 to 430 nanometers. The gallium nitride-based laser structure is grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask on the gallium nitride layer on a sapphire substrate, areas in a second gallium nitride layer can have a low defect density upon which the remainder of the laser structure can be formed.

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Kapolnek et al., "Anistropic epitaxial lateral growth in GaN selective area epitaxy", Applied Physics Letters, vol. 71(9), Sep. 1, 1997, pp. 1204-1206 .

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