Blue light emitting semiconductor device and method of fabricati

Details Blue light emitting semiconductor device and method of fabricati Blue light emitting semiconductor device and method of fabricati

1993-07-21

1994-12-13

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053735218

ABSTRACT:
A blue light emitting semiconductor device includes a first cladding layer, a second cladding layer, and an active layer. The first cladding layer includes a Group II-VI compound semiconductor of a first conduction type. The second cladding layer includes a Group II-VI compound semiconductor of a second conduction type different from the first conduction type. The active layer includes a Group II-VI compound semiconductor of the second conduction type, and extends between the first and second cladding layers a substrate includes a Group III-V compound semiconductor. At least two laminated buffer layers including Group III-V compound semiconductors extend between the first cladding layer and the substrate. An energy band gap at a position in the substrate, the buffer layers, and the first cladding layer varies stepwise as the position moves from the substrate to the first cladding layer via the buffer layers.

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patent: 4794606 (1988-12-01), Kondow et al.
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patent: 5093696 (1992-03-01), Kinoshita
patent: 5179566 (1993-01-01), Iwano et al.
"Blue and Green Diode Lasers in ZnSe-based Quantum Wells", Jeon et al., Applied Physics Letters, vol. 60 No. 17, 27 Apr., 1992, pp. 2045-2047.
"Blue-green laser diodes" by M. A. Haase et al: Appl. Phys. Lett., vol. 59, No. 11: Sep. 9, 1991: pp., 1272-1274.

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