Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-08-29
1998-08-25
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 96, 257 97, 257 99, 257 13, 257749, 372 43, H01L 3300, H01S 318
Patent
active
057985375
ABSTRACT:
There is disclosed a blue light emitting device having a laminated structure, which comprises a buffer layer made of a first conductivity type GaN-based semiconductor, a first cladding layer made of the first conductivity type GaN-based semiconductor, an active layer made of a substantially intrinsic GaN-based semiconductor, and a second cladding layer made of a second conductivity type GaN-based semiconductor, on a conductive substrate such as a conductive sapphire substrate. The GaN-based semiconductors of the present invention are made of quaternary compound semiconductor layers, and preferably made of In.sub.x A.sub.y Ga.sub.1-x-y N whose mole fraction values x, y satisfy 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1. The mole fraction values x, y are selected to obtain desired luminous wavelength and intensity.
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patent: 5369289 (1994-11-01), Tawaki
patent: 5602418 (1997-02-01), Imai
patent: 5652438 (1997-07-01), Sassa
patent: 5656832 (1997-08-01), Ohba
patent: 5670798 (1997-09-01), Schetzina
Jackson Jerome
Kabushiki Kaisha Toshiba
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