Coherent light generators – Particular active media – Semiconductor
Patent
1992-04-23
1994-03-01
Scott, Jr., Leon
Coherent light generators
Particular active media
Semiconductor
372 50, 257 79, H01S 319
Patent
active
052915077
ABSTRACT:
A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the first guiding layer, a second guiding layer of p-type ZnSe semiconductor overlaying the quantum well layer, and a second cladding layer of p-type ZnSSe semiconductor overlaying the second guiding layer.
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Cheng Hwa
DePuydt James M.
Haase Michael A.
Qiu Jun
Griswold Gary L.
Jr. Leon Scott
Kirn Walter N.
Linder Walter C.
Minnesota Mining and Manufacturing Company
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