Blocked impurity band detectors

Details Blocked impurity band detectors Blocked impurity band detectors

1980-10-23

1986-02-04

Moskowitz, Nelson

357 58, H01L 3106, H01L 3118, H01L 2714

Patent

active

045689601

ABSTRACT:
Disclosed is a blocked-impurity-band detector, including an active layer which is doped with a sufficient amount of either a donor or an acceptor impurity that significant charge transport can occur in an impurity band in addition to the charge transport of electrons in the conduction band of the layer and of holes in the valence band of the layer. A blocking layer is disposed on the active layer and contains a sufficiently low concentration of impurities that significant charge transport cannot occur in the blocking layer except by means of electrons in the conduction band of the layer or holes in the valence band of the layer. First and second electrodes are provided for applying a bias potential across the active and blocking layers.

REFERENCES:
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Petroff et al, "Low Level Radiation Effects in Extrinsic Infrared Detectors", 7/79, pp. 4840-4846, IEEE Annual Conference on Nuclear and Space Radiation Effects, portions printed in IEEE Trans. Nucl. Sci. (USA), vol. NS26, #6.
P. R. Bratt, Impurity Germanium and Silicon Infrared Detectors, in vol. 12, Semiconductors and Semimetals, pp. 85-90 (R. K. Willardson, Ed. 1977).
A. L. Efros et al., Impurity Conductivity in Low Compensated Semiconductors, 50 Phys. Stat. Sol. (b) 45 (1972).
N. F. Mott et al., The Theory of Impurity Conduction, 10 Advances in Physics, 110-116 (1961).

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