Block switch in flash memory device

Details Block switch in flash memory device Block switch in flash memory device

2007-04-17

2007-04-17

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185230, C365S185180, C365S185130

Reexamination Certificate

active

11010156

ABSTRACT:
Disclosed herein is a block switch of a flash memory device in which a voltage higher than a predetermined operating voltage is generated to drive path transistors in order to stably apply the predetermined operating voltage to a selected cell block of the flash memory device. The block switch generates a high voltage clock signal of a high voltage level according to a control signal and a clock signal, and raises the voltage level of an output terminal to a predetermined level according to the high voltage clock signal. Accordingly, a high voltage can be outputted even at a low power supply voltage. There is no need for a decoder for high voltage as in a precharge and self-boosting mode. A voltage can be directly applied to word lines without a precharge operation. It is thus possible to reduce an operating time.

REFERENCES:
patent: 6278315 (2001-08-01), Kim
patent: 6337807 (2002-01-01), Futatsuyama et al.
patent: 6611460 (2003-08-01), Lee et al.

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