Block erasable flash EEPROM apparatus and method thereof

Static information storage and retrieval – Floating gate – Particular biasing

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36523003, 3652385, 365218, 365900, G11C 1134, G11C 700, G11C 800

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active

053392795

ABSTRACT:
A block erasable flash EEPROM (22) having a single array (68) which can be partitioned into one or more blocks (50-57). The same column decode/block select circuitry (66) is used to provide both column select signals (71) and block select signals (73). The number of blocks (50-57) and the size of each block (50-57) can be determined by the manufacturer during the manufacturing process. Each block (50-57) has a corresponding charge pump (80-87). Each charge pump (80-87) is capable of erasing a single block within the array (68). Each charge pump (80-87) has a variable capacitor (90-97). Each of the variable capacitors (90-97) can be sized according to the size of its corresponding block (50-57).

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