Block electrically erasable EEPROM

Details Block electrically erasable EEPROM Block electrically erasable EEPROM

1986-05-30

1988-11-08

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

357 235, 365218, G11C 1134

Patent

active

047837667

ABSTRACT:
An electrically programmable, electrically erasable semiconductor memory apparatus for storing information in which the equivalent of a floating gate memory device and a select transistor device are combined in a single device cell is disclosed. A single control gate both controls a select transistor and is used in programming the floating gate.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4328565 (1982-05-01), Harari
patent: 4409723 (1983-10-01), Harari
patent: 4412311 (1983-10-01), Miccoli et al.
Microchip, A Practical Guide to Semiconductor Processing, by Peter Van Zant, 1986, p. 249.
Frohman-Bentchkowsky, "Famos--A New Semiconductor Charge Storage Device," pp. 517-529 (1973).
Kooi, et al., "Formation of Silicon Nitride At A Si-SiO2 Interface During Local Oxidation of Silicon and During Heat-Treatment of Oxidized Silicon in NH3 GAS," pp. 1117-1120 (Jul. 1976).
Guterman, et al, "An Electrically Alterable Nonvolatile Memory Cell Using a Floating Gate Structure," pp. 498-508 (Apr. 1979).
Masuoka, et al., "A New Flash Ez Prom Cell Using Triple Polysilicon Technology," pp. 464-467 (1984).
Mukherjee, et al., "A Single Transistor EEPROM Cell and its Implementation in a 512K CMOS EEPROM," pp. 616-619 (1985).

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