Bloch line memory device

Static information storage and retrieval – Magnetic shift registers – Thin film

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365 29, G11C 1908

Patent

active

048456713

ABSTRACT:
A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.

REFERENCES:
patent: 4583200 (1986-04-01), Konishi et al.
Journal of Applied Physics-vol. 49, No. 3, Mar. 1978, pp. 18-31 to 1833.

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