Patent
1979-07-17
1982-05-18
Evans, F. L.
G02B 518
Patent
active
043301754
ABSTRACT:
In a diffraction grating made of a single crystalline silicon substrate, one major plane thereof is provided with a plurality of asymmetric triangular grooves, each having a wall inclined by an angle .theta. with respect to the major surface so as to satisfy an equation ##EQU1## where .theta. represents the blaze angle, P the pitch of the groove, .lambda..sub.B the blazing wavelength, and m the order of diffraction. The walls of each groove receiving incident light is covered with a metal coat.
The diffraction grating is prepared by using a {hkl} plane (where h=k) inclined by .theta. with respect to the {111} plane of the single crystalline silicon as a major surface, and then anisotropic-etching the major surface through an etching mask having stripes having sufficiently smaller width than the grating constant. Preferably, following the anisotropic etching, isotropic etching is made for the major surface.
REFERENCES:
patent: 3530010 (1970-09-01), Blakely
Tsang et al., "Preferentially Etched Diffracting Gratings in Silicon", Journal of Applied Physics, vol. 46, No. 5, pp. 2163-2165, May 1975.
Fujii Yohji
Minowa Junichiro
Arnold Bruce Y.
Evans F. L.
Nippon Telegraph & Telephone Public Corporation
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