Blanks for phase shift photomasks, and phase shift photomasks

Details Blanks for phase shift photomasks, and phase shift photomasks Blanks for phase shift photomasks, and phase shift photomasks

1994-07-19

1996-10-01

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430271, 430321, 428209, 428210, G03F 900

Patent

active

055610099

ABSTRACT:
The invention provides a phase shift photomask which includes an etching stopper layer transparent to ultraviolet illumination light and well resistant to etching as well as chemicals, acids, etc., and enables a phase shift angle to be controlled with high accuracy. In a phase shift photomask including a transparent substrate 210, and an etching stopper layer 202 and at least a phase shifter pattern 204 stacked on the substrate in this order, the etching stopper layer 202 is composed predominantly of hafnium oxide.

REFERENCES:
patent: 4440841 (1984-04-01), Tabuchi
patent: 5254202 (1993-10-01), Kaplan
patent: 5380608 (1995-01-01), Miyashita et al.

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