Blanks for halftone phase shift photomasks, halftone phase shift

Details Blanks for halftone phase shift photomasks, halftone phase shift Blanks for halftone phase shift photomasks, halftone phase shift

1997-01-13

1998-02-24

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430320, G03F 900

Patent

active

057210756

ABSTRACT:
The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

REFERENCES:
patent: 5429896 (1995-07-01), Hasegawa
patent: 5429897 (1995-07-01), Yoshioka
patent: 5538816 (1996-07-01), Hashimoto

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