Blanking aperture array type charged particle beam exposure

Details Blanking aperture array type charged particle beam exposure Blanking aperture array type charged particle beam exposure

1994-10-24

1995-07-04

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250396R, H01J 37302

Patent

active

054303044

ABSTRACT:
A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.

REFERENCES:
patent: 4153843 (1979-05-01), Pease
patent: 4980567 (1990-12-01), Yasuda et al.
patent: 5144142 (1992-09-01), Fueki et al.
patent: 5194741 (1993-03-01), Sakamoto et al.
patent: 5215623 (1993-06-01), Takahashi et al.
patent: 5260579 (1993-11-01), Yasuda et al.

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