Blanket tungsten etchback process using disposable spin-on-glass

Details Blanket tungsten etchback process using disposable spin-on-glass Blanket tungsten etchback process using disposable spin-on-glass

1993-04-14

1994-02-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437180, 437192, 437193, 437203, 437231, H01L 2144

Patent

active

052866750

ABSTRACT:
A new method of completing a tungsten contact is described. An insulator layer is formed over device structures in and on a semiconductor substrate. The insulator layer is flowed to planarize the layer. The insulator layer is covered with a spin-on-glass layer which is baked and cured. Contact openings are formed through the insulator and spin-on-glass layers to the device structures and to the substrate. A nucleation layer is formed over the spin-on-glass layer and within the contact openings. A layer of tungsten is deposited over the nucleation layer. The tungsten layer is etched back, thereby leaving the tungsten layer within the contact openings and leaving some of the tungsten layer as residue overlying the spin-on-glass layer. The spin-on-glass layer is removed, thereby removing any tungsten layer residue overlying the spin-on-glass layer. The contacts are completed by an aluminum metalization.

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J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides, Noyes Publications, Park Ridge, N.J. 1992 pp. 43-50.

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