Blanket punchthrough and field-isolation implant for sub-micron

Details Blanket punchthrough and field-isolation implant for sub-micron Blanket punchthrough and field-isolation implant for sub-micron

1990-07-09

1991-06-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 57, 437 70, 148DIG18, H01L 21265

Patent

active

050249614

ABSTRACT:
A blanket boron implant that functions as both a punchthrough and field-isolation implant for sub-micron N-channel CMOS devices. The boron impurity is implanted with high energy subsequent to field oxide growth in order to position the impurity below the field oxide regions and below the future channel region of the N-channel devices. In order to avoid significant counter-doping of the substrate in the N-well regions, the phosphorus dosage during the N-well implant is at a much higher dosage level than the dosage level used for the punchthrough/field isolation implant.

REFERENCES:
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 4839301 (1989-06-01), Lee

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