Blanket CMOS channel-stop implant

Details Blanket CMOS channel-stop implant Blanket CMOS channel-stop implant

1989-12-11

1991-12-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 57, H01L 21335

Patent

active

050735098

ABSTRACT:
A CMOS transistor is fabricated by forming the n-wells with both phosphorus and arsenic implants. The arsenic, with its lower diffusion coefficient, tends to concentrate near the top surface of the n-wells, with the phosphorus penetrating sufficiently to define the n-wells at the desired depth. A boron channel stop implant is later applied without masking over the n-wells. Since the arsenic implant is concentrated near the surface, the arsenic impurities overcome the effects of the boron impurities.

REFERENCES:
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4839301 (1989-06-01), Lee

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