Blackbody radiation source with constant planar energy flux

Details Blackbody radiation source with constant planar energy flux Blackbody radiation source with constant planar energy flux

1983-05-10

1984-12-04

Mayewsky, Volodymyr Y.

Electric heating

Heating devices

With heating unit structure

219354, 219411, 219343, 2504931, 338293, 338217, 373134, H05B 310

Patent

active

044866526

ABSTRACT:
A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.

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