Black matrix base board and manufacturing method therefor, and l

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

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427 98, G02F 11335

Patent

active

056317530

DESCRIPTION:

BRIEF SUMMARY
FIELD OF THE INVENTION

The present invention relates to black matrix substrates and processes for preparing the same, more particularly to black matrix substrates which show high dimensional accuracy and excellent light-shielding properties and processes for preparing the same. Further, the invention also relates to liquid crystal display panels and processes for preparing the same, more particularly to liquid crystal display panels of high precision which can be easily prepared.


BACKGROUND OF THE INVENTION

Monochromatic or color liquid crystal display panels have been recently paid much attention as flat displays. The liquid crystal display panels include those of active matrix system and those of simple matrix system. In the color liquid crystal display panels of both systems, a color filter is used. For example, a color liquid crystal display panel of active matrix system using a thin film transistor (TFT) is formed by placing a TFT substrate and a color filter to face each other and sealing a liquid crystal layer between a substrate of the TFT substrate and a substrate of the color filter. For the color filter, three primaries of red (R), green (G) and blue (B) are used, and the liquid crystal acts as a shutter by switching on or off an electrode corresponding to each pixel of R, G and B, whereby transmission of each light of the three primaries is controlled to effect color display. On the other hand, the TFT substrate comprises a transparent substrate, a semiconductor device and a pixel electrode, said semiconductor device and said pixel electrode being formed integrally with each other on the transparent substrate. The semiconductor device is a thin film transistor (TFT) composed of a gate electrode, a gate insulating layer, a semiconductor layer made of amorphous silicon (a-Si) or the like, a source electrode and a drain electrode. One end of the drain electrode is connected with the semiconductor layer, and the other end thereof is connected with the pixel electrode. Further, an alignment film is formed to cover the semiconductor device and the pixel electrode.
In the semiconductor layer made of a-Si or the like, however, an photocurrent is large, and therefor the semiconductor device is required to be shielded from light to inhibit leaking of the photocurrent. Accordingly, the color filter is constructed by forming a light-shielding layer (black matrix), colored layers of R, G and B, a overcoat, a transparent electrode layer and an orientation layer on a transparent substrate. The light-shielding layer also serves to enhance chromaticness and display contrast in addition to the inhibition of leaking of the photocurrent. Such a light-shielding layer as mentioned above is required to be provided not only in the color liquid crystal display panels but also in the monochromatic liquid crystal display panels for the same reason.
As the light-shielding layer, there have been conventionally known a light-shielding layer obtained by forming a relief through photoetching of a chromium thin film, a light-shielding layer obtained by dyeing a hydrophilic resin relief, a light-shielding layer obtained by forming a relief using a photosensitive resin in which a black pigment is dispersed (see: Japanese Patent Laid-Open Publications No. 1(1989)-102429, No. 1(1989)-239523 and No. 2(1990)-239204), a light-shielding layer obtained by electrodeposition of a black electrodeposition paint, a light-shielding layer obtained by metal-plating with a given pattern on a cured polymer film containing a catalyst for electroless plating to form a metallic thin film (see: Japanese Patent Laid-Open Publication No. 2(1990)-251801), and a light-shielding layer obtained by printing.
However, there are various problems in those conventional light-shielding layers. For example, the light-shielding layer obtained by forming a relief through photoetching of a chromium thin film needs a vacuum process such as deposition or sputtering in its preparation, or the process for preparing the light-shielding layer is complicated, resultin

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