BJT with ESD self protection

Details BJT with ESD self protection BJT with ESD self protection

2007-05-22

2007-05-22

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S558000, C257S557000, C257S378000, C257S370000

Reexamination Certificate

active

11129957

ABSTRACT:
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.

REFERENCES:
patent: 5541433 (1996-07-01), Lien
patent: 5874767 (1999-02-01), Terashima et al.
patent: 6815732 (2004-11-01), Vashchenko et al.
patent: 6815800 (2004-11-01), Mallikarjunaswamy
patent: 7145206 (2006-12-01), Mallikarjunaswamy
patent: 2002/0158270 (2002-10-01), Yamamoto et al.
U.S. Appl. No. 10/821,287, filed Apr. 9, 2004, Vashchenko et al.
U.S. Appl. No. 11/060,877, filed Feb. 18, 2005, Vashchenko et al.
U.S. Appl. No. 10/649,989, filed Aug. 27, 2003, Vashchenko et al.
U.S. Appl. No. 10/650,000, filed Aug. 27, 2003, Vashchenko et al.

Affiliated with

Also associated with

Rating

BJT with ESD self protection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BJT with ESD self protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BJT with ESD self protection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3817100