BJT based ESD protection structure with improved current...

Details BJT based ESD protection structure with improved current... BJT based ESD protection structure with improved current...

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S565000, C257S579000

Reexamination Certificate

active

06853053

ABSTRACT:
In a BJT ESD protection structure, the ESD current density is stabilized by partially blocking one or more of the emitter and n+ collector, sinker, and n-buried layer to define a comb-like structure for the partially blocked regions.

REFERENCES:
patent: 5426323 (1995-06-01), Reczek et al.
patent: 20020135046 (2002-09-01), Yu
patent: 20030085429 (2003-05-01), Hulfachor

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