Bitline governed approach for programming non-volatile memory

Details Bitline governed approach for programming non-volatile memory Bitline governed approach for programming non-volatile memory

2007-10-09

2007-10-09

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S185230

Reexamination Certificate

active

11207260

ABSTRACT:
In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage element. A first program voltage is applied to the first non-volatile storage element. For example, a program pulse is applied to a control gate for the first non-volatile storage element. During the program pulse, the bit line is changed from said first voltage to a second voltage, where the second voltage allows the first non-volatile storage element to be programmed.

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