Bit symbol recognition method and structure for multiple bit...

Details Bit symbol recognition method and structure for multiple bit... Bit symbol recognition method and structure for multiple bit...

2006-03-16

2008-07-15

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185190, C365S185280

Reexamination Certificate

active

07400527

ABSTRACT:
Storage of information represented by a multi-bit word in a single non-volatile memory cell is made possible by programming the threshold voltage of the non-volatile memory to a specific threshold level corresponding to the multi-bit word. Stored or generated multi-bit words are scanned and converted into a gate voltage to be applied to the non-volatile memory cell until the electrical response from the non-volatile memory cell indicates that the voltage generated from the specific multi-bit word which has been applied to the gate matches the information stored in the non-volatile memory cell. The matched multi-bit word is read out of storage and represents the stored bits in the single non-volatile memory cell.

REFERENCES:
patent: 5751635 (1998-05-01), Wong et al.
patent: 5973956 (1999-10-01), Blyth et al.

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