Bit line reference circuits for binary and...

Details Bit line reference circuits for binary and... Bit line reference circuits for binary and...

2005-06-14

2005-06-14

Nelms, David (Department: 2818)

Static information storage and retrieval

Floating gate

Multiple values

C365S185080, C365S185110, C365S185200, C365S185240, C365S189110, C365S207000

Reexamination Certificate

active

06906951

ABSTRACT:
Auto-tracking bit line reference schemes generate a “½ cell current” reference by programming reference cells to threshold voltages that are between threshold voltage levels used to represent data. A common word line can control both a selected memory cell and a reference cell to provide a reference current, and differential sense amplifiers can compare a bit line current to reference currents to thereby distinguish data values. Current through other reference cells can be mirrored to pull-up devices to further improve the tracking of the reference line and bit line currents. Embodiments of the invention can be used with binary and multiple-bit-per-cell memories and with a variety of memory array architectures and memory cell structures.

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