Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-09-11
2009-06-02
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S203000, C365S185210, C365S189090, C365S185180
Reexamination Certificate
active
07542352
ABSTRACT:
A bit line precharge circuit is provided by the present invention. The bit line precharge circuit groups the precharge sub-circuits to share one drain bias controller. The drain bias controller has an inverter and a NMOS clamping transistor to form a negative feedback loop, to quickly precharge bit lines. When operating in read operation, only one drain bias controller is needed. Therefore, it can greatly save the layout area and operating power consumption without any extra dummy bit line or layout expansion.
REFERENCES:
patent: 7082069 (2006-07-01), Chou et al.
Elite Semiconductor Memory Technology Inc.
Ho Hoai V
Jianq Chyun IP Office
Lappas Jason
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