Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-03-13
2010-11-09
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185290, C365S185330
Reexamination Certificate
active
07830713
ABSTRACT:
A nonvolatile memory structure with pairs of serially connected select transistors connected to the top and optionally to the bottom of NAND series strings of groups of the dual-sided charge-trapping nonvolatile memory cells for controlling connection of the NAND series string to an associated bit line. A first of the serially connected select transistors has an implant to make a threshold voltage of the implanted first serially connected select transistor different from a non-implanted second serially connected select transistor. The pair of serially connected top select transistors is connected to a first of two associated bit lines. Optionally, the NAND nonvolatile memory strings further is connected a pair of serially connected bottom select transistors that is connected to the second associated bit line.
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Hsu Fu-Chang
Lee Peter Wung
Ackerman Stephen B.
Aplus Flash Technology Inc.
Knowles Billy
Nguyen Dang T
Saile Ackerman LLC
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