Bit line control circuit for semiconductor memory device

Details Bit line control circuit for semiconductor memory device Bit line control circuit for semiconductor memory device

2006-06-30

2008-09-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S189110, C365S207000

Reexamination Certificate

active

07423911

ABSTRACT:
A semiconductor memory device includes a bit line sense amplifier for sensing and amplifying data applied on a bit line; a first driver for driving a pull-up voltage line of the bit line sense amplifier to a voltage applied on a normal driving voltage terminal; an overdriving signal generator for generating an overdriving signal defining an overdriving period in response to an active command; an overdriving control signal generator for receiving the overdriving signal to generate an overdriving control signal for selectively performing an overdriving operation according to a voltage level of an overdriving voltage; and a second driver for driving the normal driving voltage terminal to the overdriving voltage in response to the overdriving control signal.

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Taiwanese Office Action and Search Report, with English Translation, issues in Taiwanese Patent Application No. 95123936 dated on May 7, 2008.

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