Bit cell designs for ternary content addressable memory

Details Bit cell designs for ternary content addressable memory Bit cell designs for ternary content addressable memory

2011-05-10

2011-05-10

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Associative memories

Compare/search/match circuit

C365S049100, C365S049110

Reexamination Certificate

active

07940541

ABSTRACT:
A scheme for bit cell designs for ternary content addressable memory for comparing search data with content data is disclosed. In one embodiment, a system for comparing search data with content data stored in a ternary content addressable memory (TCAM) unit, includes a first static logic gate for comparing a first content data with a first search data, and a second static logic gate coupled to the first static logic gate for comparing a second content data with a second search data. The content data comprises the first content data and the second content data and the search data comprises the first search data and the second search data. The first static logic gate forwards a signal for disabling the second static logic gate if the first content data does not match with the first search data.

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