Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device
Patent
1996-05-28
1997-07-29
Tokar, Michael J.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
257 2, 250331, 359265, 359273, H01L 4700, G02F 115
Patent
active
056524331
ABSTRACT:
A description is given of a switching device 1 comprising a transparent substrate 3, a switching film 5 of gadolinium having a thickness of 200 nm and a palladium layer (7) having a thickness of 10 nm. Under the influence of hydrogen gas, a transparent semiconductive layer (5) of GdH.sub.x (x>2) is formed which can be converted into a non-transparent layer of GdH.sub.x (x<2) by means of evacuation. The conversion between both compositions is reversible, and this phenomenon can for example be used in an optical switching element, a hydrogen sensor and thin displays.
REFERENCES:
patent: 4818080 (1989-04-01), Glasheen
patent: 4999321 (1991-03-01), Kohli
patent: 5069535 (1991-12-01), Baucke et al.
patent: 5202786 (1993-04-01), Boyle et al.
Ouwerkerk Martin
Van Der Sluis Paul
Fox John C.
Seacord, II Andrew W.
Tokar Michael J.
U.S. Philips Corporation
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