Bistable semiconductor flip-flop having a high resistance feedba

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307225C, 307303, 357 42, H03K 3286, H03K 3353, H03K 2700, H03B 1914

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active

041248074

ABSTRACT:
A CMOS bistable semiconductor flip-flop circuit having a storage element formed by a first and a second inverter. The output of the second inverter is directly connected to the input of the first inverter. The first inverter output is coupled to the second inverter input through a high resistance feedback of resistance value which is substantially high with respect to the low output impedance of the first inverter. A charge storage device and gates alternately store the state of the storage element and thereafter provide the stored signal to the second inverter input. Additionally, a device is connected to the input of the second inverter to provide a reset or set function.

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Seidel et al. "Buried-Guarded Layer Ion-Implanted Resistors", IEEE Trans. on Electron Devices, vol. ED-20, No.8;8/1973; pp. 744-748.
Surgent, "Insulated Gate Field-Effect Transistor Sense Amplifier Latch;" IBM Tech.Discl. Bull; vol. 13, No. 9, pp. 2670-2671; 2/1971.

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