Bistable semiconductor component for high frequencies having fou

Details Bistable semiconductor component for high frequencies having fou Bistable semiconductor component for high frequencies having fou

1975-12-19

1978-03-28

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 39, 357 88, 357 89, 307305, H01L 104, H01L 300, H01L 500

Patent

active

040818217

ABSTRACT:
A bistable semiconductor component for high frequencies with a semiconductor chip includes a sequence of at least four zones of alternating opposed types of conductivity. The outer zones form the emitter zones and are more heavily doped than the two inner zones. The base zones are so doped that with a voltage V.sub.R smaller than or at most equal to the maximum inverse voltage V.sub.RS applied in the reverse direction across the two emitter zones, the shortest distance W between the two blocking layers formed at the two outer junctions is less than the diffusion length L.sub.B of the charge carriers in the base zones.

REFERENCES:
patent: 3231796 (1966-01-01), Shombert
patent: 3277352 (1966-10-01), Hubner
patent: 3483441 (1969-12-01), Hofflinger
patent: 3900771 (1975-08-01), Krause
patent: 3914781 (1975-10-01), Matsushita
patent: 3943549 (1976-03-01), Jaecklin et al.

Affiliated with

Also associated with

Rating

Bistable semiconductor component for high frequencies having fou does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bistable semiconductor component for high frequencies having fou, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bistable semiconductor component for high frequencies having fou will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-646068