Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-01-24
1999-01-26
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257608, 257610, 2502141, H01L 2714, H01L 3110, H01L 29167, H01L 29207
Patent
active
058641661
ABSTRACT:
A photoconductive switching device is disclosed that has an enhanced speed of response so that its closed (low) and open (high) resistive states are obtained in response to optical illumination in the less than nanosecond regime. The enhanced speed of response is achieved by neutron irradiation of a material preferably comprising GaAs:Si:Cu. An application of the improved photoconductive switching devices is disclosed which allows the realization of a high-power, frequency-agile RF source topology.
REFERENCES:
patent: 3415996 (1968-12-01), Grimmeiss
patent: 4246590 (1981-01-01), Thomas et al.
patent: 4679063 (1987-07-01), White
patent: 4825061 (1989-04-01), Schoenbach et al.
patent: 5153442 (1992-10-01), Bovino et al.
patent: 5332918 (1994-07-01), Smith et al.
patent: 5371399 (1994-12-01), Burroughes et al.
patent: 5374589 (1994-12-01), Roush et al.
Kullendorf, et al, "Copper-Related Deep Level Defects in III-V Semiconducs," published in J.Appl. Phys., vol. 54, pp. 3203-3212, 1983.
D.V. Lang and R.A. Logan, "A Study of Deep Levels in GaAs by Capacitance Spectroscopy," published in the J. Electronic Materials, vol. 4, pp. 1053-1066, 1975.
C.L. Wang, et al, "NeutronOTreated, Ultrafast, Photoconductor Detectors," published in Appl. Phys. Lett., vol. 54, pp. 1451-1453, 1989.
D.C. Stoudt, et al, "Characterization and Switching Study of an Optically Controlled GaAs switch," published Proc. SPIE, vol. 1378, Optically Activated Switching, 1990, pp. 280-285.
D.C. Stoudt, et al, "Investigation of a Laser-Controlled, Copper-Doped GaAs Closing (low resistance state) and Opening (high resistance state) Switch for Pulsed Power Applications," published Proc. 8th IEEE Pulsed Power Conf., San Diego, CA. 1991, pp. 41-45.
M.S. Mazzola et al, "Subnanosecond Performance of the BOSS GaAs Opening Switch," published in Proc. 20th Power Mod. Symp., Myrtle Beach, SC, 1992, pp. 266-270.
D.C. Stoudt, et al, "Effects of 1MeV Neutron Irradiation on the Operation of a Bistable Optically Controlled Semiconductor Switch (BOSS)," published in IEEE Trans. Electron Dev., vol. 41, pp. 913-919, 1994.
F.J. Zutavern and G.M. Loubriel, "High-Power Optically Activated Solid-State Switches," A. Rosen and F. Zutavern, Eds., Boston: Artech House, 1994, Chapter 11.
Richardson Michael A.
Stoudt David C.
Bechtel, Esq. James B.
Meier Stephen D.
The United States of America as represented by the Secretary of
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