Coherent light generators – Particular active media – Semiconductor
Patent
1993-04-19
1994-09-20
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
362800, H01S 319
Patent
active
053495993
ABSTRACT:
A semiconductor apparatus for propagating light in a preferred direction which comprises, in succession, a substrate, a first emitter region, a first carrier confinement region, a first internal heterojunction barrier, a first base region, a second base region, a second internal heterojunction barrier, a second carrier confinement region, and a second emitter region, wherein portions of the first emitter region and the second base region are of one conductivity type and portions of the second emitter region and the first base region are of the opposite conductivity type, wherein the first and second emitter regions, the first and second internal heterojunction barriers and the first and second base regions together define a single optical cavity in the directions perpendicular to the preferred direction of light propagation, and electrodes are provided for applying an electrical current which flows through the semiconductor apparatus.
REFERENCES:
patent: 4829357 (1989-05-01), Kasahara
patent: 4855250 (1989-08-01), Yamamoto et al.
patent: 4862238 (1989-08-01), Shannon
patent: 4864168 (1989-09-01), Kasahara et al.
patent: 4910571 (1990-03-01), Kasahara et al.
patent: 4994882 (1991-02-01), Hess
patent: 5061979 (1991-10-01), Kobayashi et al.
patent: 5241169 (1993-08-01), Ohzu
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovenko, "p-n-p-n structures based on GaAs and Al.sub.x Ga.sub.1-x As solid solutions," Soviet Physics-Semiconductors, vol. 4, No. 3, Sep. 1970, pp. 481-483.
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, V. G. Nikitin, E. L. Portnoi, and A. A. Yakovenko, "Recombination radiation emitted by four-layer structures based on GaAs-AlAs heterojunctions," Soviet Physics-Semiconductors, vol. 6, No. 4, Oct. 1972, pp. 637-638.
Zh., I. Alferov, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovenko, "Investigation of electroluminescent p-n-p-n structures based on GaAs-Al.sub.x Ga.sub.1-x As heterojunctions," Soviet Physics-Semiconductors, vol. 6, No. 7, Jan. 1973, pp. 1138-1142.
Zh. I. Alferov, V. M. Andrfeev, V. I. Korol'kov, V. G. Nikitin, V. B. Smirnov and A. A. Yakovenko, "Investigation of transient processes in electroluminescent p-n-p-n structures," Soviet Physics-Semiconductors, vol. 7, No. 5, Nov. 1973, pp. 621-623.
H. F. Lockwood, K. F. Etzold, T. E. Stockton and D. P. Marinelli, "The GaAs P-N-P-N laser diode," IEEE Journal of Quantum Electronics, vol. QE-10, No. 7, Jul. 1974, pp. 567-569.
Zh. I. Alferov, F. A. Akmedov, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovenko, "Electroluminescent photothyristors based on GaAs and Al.sub.x Ga.sub.1-x As heterojunctions," Soviet Physics-Semiconductors, vol. 8, No. 9, Mar. 1975, pp. 1127-1130.
J. A. Copeland, A. G. Dentai and T. P. Lee, "p-n-p-n optical detectors and light-emitting diodes," IEEE Journal of Quantum Electronics, vol. QE-14, No. 11, Nov. 1978, pp. 810-813.
C. P. Lee, A. Gover, S. Margalit, I. Samid and A. Yariv, "Barrier-controlled low-threshold pnpn GaAs heterostructure laser," Applied Physics Letters, vol. 30, No. 10, May 15, 1977, pp. 535-538.
Zh. I. Alferov, V. I. Korol'kov, N. Rakhimov and M. N. Stepanova, "Investigation of GaAs-Al.sub.x Ga.sub.1-x As heterostructure thyristors," Soviet Physics-Semiconductors, vol. 12, No. 1, Jan. 1978, pp. 42-46.
M. C. Hanna, A. Majerfeld, E. G. Oh, J. I. Pankove and D. M. Szmyd, "Optical switch with optical and electronic bistability," Institute of Physics Conference Series No. 96: Chapter 8, pp. 543-546 (IOP Publishing Ltd. Jan. 1989).
M. Ogura, W. Hsin, M-C. Wu, S. Wang, J. R. Whinnery, S. C. Wang, and J. J. Yang, "Surface-emitting laser diode with vertical GaAs-GaAlAs-quarter-wavelength multilayers and lateral buried heterostructure," Applied Physics Letters, vol. 51, No. 21, Nov. 1987, pp. 1655-1657.
P. D. Ankrum, Semiconductor Electronics, (Prentice-Hall, Inc.: Englewood Cliffs, N.J., 1971), pp. 502-514.
D. L. Keune, M. G. Craford, A. H. Herzog and B. J. Fitzpatrick, "Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers," Journal of Applied Physics, vol. 43, No. 8, Aug. 1972, pp. 3417-3421.
D. Meyerhofer, A. S. Keizer and H. Nelson, "A light-activated semiconductor switch," Journal of Applied Physics, vol. 38, No. 1, Jan. 1967, pp. 111-123.
W. F. Kosonocky, R. H. Cornely and I. J. Hegyi, "Multilayer GaAs injection laser," IEEE Journal of Quantum Electronics, vol. QE-4, No. 4, Apr. 1968, pp. 176-179.
"Odd batch of light-emitting diodes yields a bonus: negative resistance," Electronics, Aug. 4, 1969, pp. 229-230.
"Red-light diode from Japan shows negative resistance," Electronics, Mar. 16, 1970, p. 62.
Y. Arai, M. Sakuta, K. Sakai and T. Ishida, "Sn-Te Compensated (GaAl)As diodes with negative resistance," Japanese Journal of Applied Physics, vol. 9, Jan. 1970, pp. 1015-1016.
R. S. Ignatkina, N. E. Kurgaeva, B. A. Krasyuk, S. S. Meskin, N. F. Nedel'skii, V. N. Ravich, and B. V. Tsarenkov, "GaP electroluminescent dynistor," Soviet Physics Semiconductors, vol. 5, No. 9, Mar. 1972, pp. 1483-1486.
C. J. Nuese, J. J. Gannon, H. F. Gossenberger and C. R. Wronski, "Electroluminescent Schockley diodes of GaAs and Ga As.sub.1-x P.sub.x," Journal of Electronic Materials, vol. 2, No. 4, Jan. 1973, pp. 572-599.
H. C. Casey, Jr. and M. G. Panish, Heterostructure Lasers: Part A, (Academic Press: New York, Jan. 1978).
Bovernick Rodney B.
Wise Robert E.
LandOfFree
Bistable optical laser based on a heterostructure PNPN thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bistable optical laser based on a heterostructure PNPN thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bistable optical laser based on a heterostructure PNPN thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2430522