Coherent light generators – Particular active media – Semiconductor
Patent
1990-03-29
1993-04-20
James, Andrew J.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 48, 257 12, 257 13, 257431, H01L 29161, H01L 3300, H01L 2714
Patent
active
052048713
ABSTRACT:
A semiconductor apparatus for propagating light in a preferred direction which comprises, in succession, a substrate, a first emitter region, a first carrier confinement region, a first internal heterojunction barrier, a first base region, a second base region, a second internal heterojunction barrier, a second carrier confinement region, and a second emitter region, wherein portions of the first emitter region and the second base region are of one conductivity type and portions of the second emitter region and the first base region are of the opposite conductivity type, wherein the first and second emitter regions, the first and second internal heterojunction barriers and the first and second base regions together define a single optical cavity in the directions perpendicular to the preferred direction of light propagation, and electrodes are provided for applying an electrical current which flows through the semiconductor apparatus.
REFERENCES:
patent: 4829357 (1989-05-01), Kasahara
patent: 4855250 (1989-08-01), Yamamoto et al.
patent: 4862238 (1989-08-01), Shannon
patent: 4864168 (1989-09-01), Kasahara et al.
patent: 4910571 (1990-03-01), Kasahara et al.
patent: 4994882 (1991-02-01), Hess et al.
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovenko, "p-n-p-n Structures Based on GaAs and A1.sub.x Ga.sub.1-x As Solid Solutions," Soviet Physics-Semiconductors, vol. 4, No. 3, Sep. 1970, pp. 481-483.
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, V. G. Nikitin, E. L. Portnoi, and A. A. Yakovenko, "Recombination Radiation Emitted by Four-Layer Structures Based on GaAs-AIAs Heterojunctions," Soviet Physics-Semiconductors, vol. 6, No. 4, Oct. 1972, pp. 637-638.
Zh. I. Alferov, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovenko, "Investigation of Electroluninescent p-n-p-n Structures Based on GaAs-A1.sub.x Ga.sub.1-x As Heterojunctions," Soviet Physics-Semiconductors, vol. 6, No. 7, Jan. 1973, pp. 1138-1142.
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, V. G. Nikitin, V. B. Smirnov and A. A. Yakovenko, "Investigation of Transient Processes in Electroluminescent p-n-p-n Structures, " Soviet Physics-Semiconductors, vol. 7, No. 5, Nov. 1973, pp. 621-623.
H. F. Lockwood, K. F. Etzold, T. E. Stockton and D. P. Marinelli, "The GaAs P-N-P-N Laser Diode," IEEE Journal of Quantum Electronics, vol. QE-10, No. 7, Jul. 1974, pp. 567-569.
Zh. I. Alferov, F. A. Akhmedov, V. I. Korol'kov, V. G. Nikitin and A. A. Yakovendo, "Electroluminescent Photothyristors Based on GaAs and A1.sub.x Ga.sub.1-x As Heterojunctions," Soviet Physics-Semiconductors, vol. 8, No. 9, Mar. 1975, pp. 1127-1130.
J. A. Copeland, A. G. Dentai and T. P. Lee, "p-n-p-n Optical Detectors and Light-Emitting Diodes," IEEE Journal of Quantum Electronics, vol. QE-14, No. 11, Nov. 1978, pp. 810-813.
C. P. Lee, A. Gover, S. Margalit, I. Samid and A. Yariv, "Barrier-Controlled Low-Threshold pnpn GaAs Heterostructure Laser," Applied Physics Letters, vol. 30, No. 10, May 15, 1977, pp. 535-538.
Zh. I. Alferov, V. I. Korol'kov, N. Rakhimov and M. N. Stepanova, "Investigation of GaAs-A1.sub.x Ga.sub.1-x As Heterostructure Thyristors," Soviet Physics-Semiconductors, vol. 12, No. 1, Jan. 1978, pp. 42-46.
M. C. Hanna, A. Majerfeld, E. G. Oh, J. I. Pankove and D. M. Szmyd, "Optical Switch with Optical and Electronic Bistability," Institute of Physics Conference Series No. 96: Chapter 8, pp. 543-546 (IOP Publishing Ltd., 1989).
M. Ogura, W. Hsin, M-C. Wu, S. Wang, J. R. Whinnery, S. C. Wang and J. J. Yang, "Surface-Emitting Laser Diode with Vertical GaAs-GaA1As Quarter-Wavelength Multilayers and Lateral Buried Heterostructure," Applied Physics Letters, vol. 51, No. 21, Nov. 1987, pp. 1655-1657.
P. D. Ankrum, Semiconductor Electronics, (Prentice-Hall, Inc.: Englewood Cliffs, NJ., 1971), pp. 502-514.
D. L. Keune, M. G. Craford, A. H. Herzog and B. J. Fitzpatrick, "Gallium Phosphide High-Temperature Electroluminescent p-n-p-n Switches and Controlled Rectifiers," Journal of Applied Physics, vol. 43, No. 8, Aug. 1972, pp. 3417-3421.
D. Meyerhofer, A. S. Keizer and H. Nelson, "A Light-Activated Semiconductor Switch," Journal of Applied Physics, vol. 38, No. 1, Jan. 1967, pp. 111-123.
W. F. Kosonocky, R. H. Cornely and I. J. Hegyi, "Multilayer GaAs Injection laser," IEEE Journal of Quantum Electronics, vol. QE-4, No. 4, Apr. 1968, pp. 176-179.
"Odd Batch of Light-Emitting Diodes Yields a Bonus: Negative Resistance," Electronics, Aug. 4, 1969, pp. 229-230.
"Red-Light Diode from Japan Shows negative Resistance," Electronics, Mar. 16, 1970, p. 62.
Y. Arai, M. Sakuta, K. Sakai and T. Ishida, "Sn-Te Compensated (Ga,Al)As Diodes with Negative Resistance, " Japanese Journal of Applied Physics, vol. 9, 1970, pp. 1015-1016.
R. S. Ignatkina, N. E. Kurgaeva, B. A. Krasyuk, S. S. Meskin, N. F. Nedel'skii, V. N. Ravich, and B. V. Tsarenkov, "GaP Electroluminescent Dynistor," Soviet Physics Semiconductors, vol. 5, No. 9, Mar. 1972, pp. 1483-1486.
C. J. Nuese, J. J. Gannon, H. F. Gossenberger and C. R. Wronski, "Electroluminescent Schockley Diodes of GaAs and Ga As.sub.1-x P.sub.x," Journal of Electronic Materials, vol. 2, No. 4, Jun. 1973, pp. 572-599.
H. C. Casey, Jr. and M. G. Panish, Heterostructure Lasers: Part A, (Academic Press: New York, 1978).
James Andrew J.
Ngo Ngan Van
Shaw, Jr. Philip M.
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