Bismuth titanate as a template layer for growth of crystallograp

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428432, 428688, 428689, 428697, 428702, 257295, B32B 904

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054786533

ABSTRACT:
A method of forming a crystallographically oriented silicon layer over a glassy layer of, for example, SiO.sub.2. A templating layer of a layered perovskite, preferably Bi.sub.4 Ti.sub.3 O.sub.12, is deposited on the glassy layer under conditions favoring its crystallographic growth with its long c-axis perpendicular to the film. The silicon is then grown over the templating layer under conditions usually favoring monocrystalline growth. Thereby, it grows crystallographically aligned with the underlaying templating layer.

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Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, 1981), p. 848.

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