Bipolar type semiconductor device having small parasitic capacit

Details Bipolar type semiconductor device having small parasitic capacit Bipolar type semiconductor device having small parasitic capacit

1994-11-14

1996-08-20

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257518, 257586, 257587, 257588, 257592, 257593, H01L 2900

Patent

active

055481558

ABSTRACT:
A semiconductor device in which a bipolar transistor is provided, such as a BiCMOS, and a production process thereof. The device has collector region of a first conductivity type; an intrinsic base region of a second conductivity type provided on the collector region; a graft base provided on the periphery of this intrinsic base region; and an emitter region of the first conductivity type provided by self-alignment with respect to the intrinsic base. A base electrode is provided in the upper portion where the graft base is scheduled to be formed. A trench is provided by self-alignment along the end portion on the outer circumference side of this base electrode. The graft base is provided in contact with the inner circumference of this trench.

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IBM Technical Disclosure Bulletin, "Ultra Dense, High Performance Bipolar Transistor," vol. 24, No. 9, Feb. 1982, pp. 4662-4664.

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