Bipolar type semiconductor device

Details Bipolar type semiconductor device Bipolar type semiconductor device

1976-04-20

1978-03-21

Miller, Jr., Stanley D.

357 52, 357 53, 357 54, 357 59, H01L 2972

Patent

active

040806197

ABSTRACT:
A bipolar-type semiconductor device, such as a bipolar transistor, has a heavily doped emitter region, a lightly doped emitter region, a base region, a collector region and a passivation layer or layers on said regions. The passivation layer formed on a surface end of a PN junction between the collector region and the base region is a polycrystalline silicon containing oxygen atoms in a range between 14 and 35 atomic percents. The other passivation layer formed on a surface end of the other PN junction between the base region and the lightly doped emitter region is made of silicon-dioxide, which covers also a surface end of lightly doped and heavily doped (LH) junction between two emitter regions.

REFERENCES:
patent: B535209 (1976-03-01), Kajiwara et al.
patent: 3977019 (1976-08-01), Matsushita et al.
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4014037 (1977-03-01), Matsushita et al.

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