Bipolar type diode

Details Bipolar type diode Bipolar type diode

1993-12-28

1999-11-16

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

With means to limit area of breakdown

257551, 257603, H01L 29861, H01L 31107

Patent

active

059863277

ABSTRACT:
A base region is formed at a shallow junction and an impurity region of higher impurity concentration is formed, by a separate step, as a buried layer at a predetermined distance from the surface of a semiconductor substrate. By so doing, a bipolar diode is implemented which does not involve an increase in a base resistance even if conduction is effected over a longer period of time.

REFERENCES:
patent: 4672403 (1987-06-01), Jennings
patent: 4732866 (1988-03-01), Chruma et al.

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