Bipolar transistors with low parasitic losses

Details Bipolar transistors with low parasitic losses Bipolar transistors with low parasitic losses

2005-12-20

2009-08-04

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S197000, C257SE29033

Reexamination Certificate

active

07569872

ABSTRACT:
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.

REFERENCES:
patent: 6911716 (2005-06-01), Chen et al.
patent: 2004/0046182 (2004-03-01), Chen et al.

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