Bipolar transistors with low parasitic losses

Details Bipolar transistors with low parasitic losses Bipolar transistors with low parasitic losses

2008-05-06

2008-05-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S197000

Reexamination Certificate

active

07368765

ABSTRACT:
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.

REFERENCES:
patent: 5506427 (1996-04-01), Imai
patent: 6320211 (2001-11-01), Morishita
patent: 6911716 (2005-06-01), Chen et al.
patent: 2002/0089038 (2002-07-01), Ning
patent: 2004/0046182 (2004-03-01), Chen et al.

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