Bipolar transistors with high voltage MOS transistors in a singl

Details Bipolar transistors with high voltage MOS transistors in a singl Bipolar transistors with high voltage MOS transistors in a singl

1992-05-04

1993-07-20

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 44, 748DIG9, H01L 21328, H01L 21336

Patent

active

052293084

ABSTRACT:
A method of manufacturing a semiconductor device having a bipolar transistor for ordinary logic operation, as well as a high voltage MOS transistor which are provided in a single semiconductor substrate. The process includes the steps of making high voltage MOS transistors which comprises the steps of n-well fabrication, first drift region fabrication, second drift region fabrication, source and drain contact region fabrication and making bipolar transistors within the same silicon substrate as the high voltage MOS transistors which includes the step of base region fabrication where the steps for fabricating the second drift region of the high voltage MOS transistor and the base region of the bipolar transistor are combined so that both regions are created simultaneously.

REFERENCES:
patent: 4628341 (1986-12-01), Thomas
patent: 4887142 (1989-12-01), Bertotti et al.
patent: 4914051 (1990-04-01), Huie et al.
Yamaguchi, Tadanori and Morimoto, Seiichi, "Process and Device Design of a 1000-V MOS IC", IEEE Transactions on Electron Devices, vol. ED-29, pp. 1171-1178, Aug. 1982.

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