Bipolar transistors using isolated selective doping to improve p

Details Bipolar transistors using isolated selective doping to improve p Bipolar transistors using isolated selective doping to improve p

1994-10-07

1996-12-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257593, H01L 27082, H01L 27102, H01L 2970

Patent

active

055811159

ABSTRACT:
Parts of the emitter and base of a vertical bipolar transistor adjoin a field-isolation region to form a walled-emitter structure. The transistor is furnished with extra doping in the collector and, optionally, in the base. The extra collector doping is provided along collector-base junction below the intrinsic base to create a special collector zone spaced laterally apart from the field-isolation region. The presence of the special collector zone causes the intrinsic base to be thinner, thereby raising the cutoff frequency and overall current gain. The extra base doping is provided in the intrinsic base along the field-isolation region to improve the transistor's breakdown voltage and leakage current characteristics.

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