Bipolar transistors

Details Bipolar transistors Bipolar transistors

1981-03-03

1983-11-08

Edlow, Martin H.

357 22, 357 2, 357 89, 357 34, H01L 29161, H01L 2980, H01L 4500, H01L 2972

Patent

active

044145578

ABSTRACT:
A base region and a collector region of a bipolar transistor are interconnected through a hetero junction and forbidden band gap of the collector region is larger than that of the base region. When the transistor is made of a silicon base material, the collector region is made of oxygen containing polycrystalline silicon or amorphous silicon, whereas when made of a GaAs base alloy, the collector region is made of a mixed crystal of GaAs-AlAs.

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patent: 4169269 (1979-09-01), Aoki et al.
patent: 4254429 (1981-03-01), Yamazaki
Ebers, J. J.; Moll, J. L.; Proc. IRE, vol. 42, p. 1761 (1954).
Iwasaki, H.; Ozawa, O.; Sasaki, T.; Proc. 9th Cour. Solid State Devices, Tokyo, 1977, Suppl. to Japan J. Appl. Phys., vol. 17-1, p. 245 (1978).
Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.; Appl. Phys. Lett., vol. 35, pp. 549-550 (Oct. 1979).
Nishizawa, J.; Ohmi, T.; Mochida, Y.; Matsuyama, T.; Iida, S.; Int. Electron Devices Mtg., p. 676 (1978).
Sudo, T.; Kodama, H.; Suzuki, T.; Mizushima, Y.; Trans. IECE of Japan, 55-6, No. 11, p. 565, (1972).

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