Bipolar transistor with ultra-thin epitaxial base and method of

Details Bipolar transistor with ultra-thin epitaxial base and method of Bipolar transistor with ultra-thin epitaxial base and method of

1991-02-22

1992-03-31

Prenty, Mark

357 59, 357 54, H01L 2972, H01L 2904, H01L 2934

Patent

active

051012561

ABSTRACT:
A method of forming a bipolar transistor is provided, comprising the steps of: providing a semiconductor substrate including a first region of a first conductivity type; forming a layer of insulative material over a surface of the first region; forming a layer of conductive material over the layer of insulative material; patterning the first and second layers to form a generally vertical sidewall bounding an exposed portion of the first region surface; and epitaxially depositing a base region of a second conductivity type over the exposed portion of the first region surface and the sidewall such that the base region is in electrical contact with the second region.

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IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980 by A. P. Ho et al, Self-Aligned Process for Forming Metal-Silicide and Polysilicon Composite Base Contact, pp. 5336-5338.
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