Fishing – trapping – and vermin destroying
Patent
1990-10-09
1992-09-01
James, Andrew J.
Fishing, trapping, and vermin destroying
357 34, 357 43, 437 31, 437 32, 437 33, H01L 21385, H01L 21425
Patent
active
051444038
ABSTRACT:
This invention pertains to a self-aligned, trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects. The bipolar transistor can be either N-P-N type or P-N-P type depending on the materials of fabrication, although high speed devices are typically of the N-P-N type.
REFERENCES:
patent: 4252582 (1981-02-01), Anantha et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4381953 (1983-05-01), Ho et al.
patent: 4392149 (1983-07-01), Horng et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4674173 (1987-06-01), Hahn et al.
patent: 4693782 (1987-09-01), Kikuchi et al.
patent: 4705599 (1987-11-01), Suda et al.
patent: 4706378 (1987-11-01), Havemann
patent: 4722908 (1988-02-01), Burton
patent: 4735912 (1988-04-01), Kawamatsu
patent: 4738624 (1988-04-01), Iyer et al.
patent: 4745087 (1988-05-01), Iranmanesh
patent: 4749661 (1988-06-01), Bower
patent: 4824799 (1989-04-01), Komatsu
patent: 4847670 (1989-07-01), Monkowski et al.
patent: 4874717 (1989-10-01), Neppl et al.
patent: 4879255 (1989-11-01), Deguchi et al.
Chiang Shang-Yi
Drowley Clifford I.
Huang Wen-Ling M.
Voorde Paul V.
Hewlett--Packard Company
James Andrew J.
Nguyen Viet Q.
LandOfFree
Bipolar transistor with trench-isolated emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor with trench-isolated emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor with trench-isolated emitter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-771923