Bipolar transistor with temperature detecting terminal

Details Bipolar transistor with temperature detecting terminal Bipolar transistor with temperature detecting terminal

1992-08-06

1996-04-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257566, H01L 31058, H01L 27082, H01L 27102, H01L 2970

Patent

active

055064396

ABSTRACT:
An object of this invention is to make it possible to directly monitor a temperature of a transistor chip. According to the present invention, p.sup.- region is formed on a substrate of a p.sup.+ layer by epitaxial growth. A first n-type diffusion layer which is a base region, and a second n-type diffusion layer which forms a temperature detecting element are formed in the p.sup.- region. A first p.sup.+ diffusion layer which is an emitter region is formed in the first n-type diffusion layer, while a second p.sup.+ diffusion layer which forms the temperature detecting element is formed in the second n-type diffusion layer. The temperature detecting element is operated in the active region, so that a characteristic free from variations in collector potential is obtained for the base-emitter potential difference of the temperature detecting element and the temperature of the junction thereof. Owing to this characteristic, the temperature of the junction can be detected from the base-emitter potential difference of the temperature detecting element during operation of the transistor.

REFERENCES:
patent: 2932714 (1960-04-01), Merrill
patent: 3219843 (1965-11-01), Follett
patent: 3275912 (1966-09-01), Kunz
patent: 3308271 (1967-03-01), Hilbiber
patent: 3951693 (1976-04-01), Fisher et al.
Sedra et al, Microelectronic Circuits, pp. 411-413 and 512-513, 1987.

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