Bipolar transistor with silicided sub-collector

Details Bipolar transistor with silicided sub-collector Bipolar transistor with silicided sub-collector

2011-08-23

2011-08-23

Warren, Matthew E (Department: 2815)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S304000, C438S311000, C438S361000, C438S655000, C438S682000, C257SE29034, C257SE29114

Reexamination Certificate

active

08003473

ABSTRACT:
Embodiments of the invention provide a method of fabricating a semiconductor device. The method includes defining a sub-collector region in a layer of doped semiconductor material; forming an active region, a dielectric region, and a reach-through region on top of the layer of doped semiconductor material with the dielectric region separating the active region from the reach-through region; and siliciding the reach-through region and a portion of the sub-collector region to form a partially silicided conductive pathway. A semiconductor device made thereby is also provided.

REFERENCES:
patent: 5177582 (1993-01-01), Meister et al.
patent: 5256896 (1993-10-01), Ning
patent: 5319239 (1994-06-01), Ning
patent: 5841197 (1998-11-01), Adamic, Jr.
patent: 6326292 (2001-12-01), Soderbarg et al.
patent: 6333235 (2001-12-01), Lee et al.
patent: 6706583 (2004-03-01), Comard
patent: 6838348 (2005-01-01), Babcock et al.
patent: 7022578 (2006-04-01), Verma et al.
patent: 2003/0193077 (2003-10-01), Fujii
patent: 2004/0104448 (2004-06-01), Marty et al.
patent: 2004090988 (2004-10-01), None
patent: 2004090989 (2004-10-01), None

Affiliated with

Also associated with

Rating

Bipolar transistor with silicided sub-collector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor with silicided sub-collector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor with silicided sub-collector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2633534