Patent
1982-10-21
1989-04-25
Carroll, J.
357 34, 357 54, 357 67, 357 71, H01L 2972, H01L 2934, H01L 2904, H01L 2348
Patent
active
048252816
ABSTRACT:
A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.
REFERENCES:
patent: 3796613 (1974-03-01), Magdo et al.
patent: 4252581 (1981-02-01), Anantha et al.
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4303933 (1981-12-01), Horng et al.
patent: 4396933 (1983-08-01), Magdo et al.
T. I. Kamins, "Chemically Vapor Deposited Polycrystalline-Silicon Films", IEEE Transactions on Parts, Hybrids, and Packaging, vol. PHP-10 (1974), pp. 221-229.
R. D. Davies, "Poly I.sup.2 L Integrated Circuit Technology for Compatible Analog and Digital Signal Processing", Stanford Electronics Laboratories Technical Report, No. 4958-7, Apr. 1978, pp. 51-62.
T. I. Kamins et al., "Structure of Chemically Deposited Polycrystalline-Silicon Films", Thin Solid Films, vol. 16(1973), pp. 147-165.
I. Kobayashi, "A New Technology for High-Power IC", IEEE Transactions on Electron Devices, vol. ED-18(1971), pp. 45-49.
Kure Tokuo
Matsuda Masatoshi
Miyazaki Takao
Nagata Minoru
Nakamura Tohru
Carroll J.
Hitachi , Ltd.
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