Bipolar transistor with shallow junctions and capable of high pa

Details Bipolar transistor with shallow junctions and capable of high pa Bipolar transistor with shallow junctions and capable of high pa

1989-02-13

1989-09-19

Edlow, Martin H.

357 50, 357 55, 357 59, H01L 2712

Patent

active

048686310

ABSTRACT:
A method of making a bipolar transistor in an LSI or VLSI process which includes forming a buried DUF collector of a first conductivity type, growing an epitaxial layer of a first conductivity type over said DUF collector and forming isolation means around a transistor region. The transistor region includes a trench which at least partially encloses the transistor region and extends through the DUF collector. Emitter and base regions of the first and second conductivity types, respectively, are formed in the epitaxial layer. A collector contact region of the first conductivity is formed in the epitaxial layer and extends down to the buried DUF collector.

REFERENCES:
patent: 3962779 (1976-06-01), Edwards et al.
patent: 3980507 (1976-09-01), Curley
patent: 3982266 (1976-09-01), Matzer
patent: 4470062 (1984-09-01), Moromatzu
patent: 4595944 (1986-06-01), Antipov
patent: 4619036 (1986-10-01), Haveman
patent: 4680614 (1987-07-01), Beyer et al.

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