Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2007-10-30
2007-10-30
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257SE29184, C257SE29182, C257SE29183, C257S587000, C438S366000, C438S374000, C438S376000
Reexamination Certificate
active
10904437
ABSTRACT:
Disclosed is a method of forming a transistor in an integrated circuit structure that begins by forming a collector in a substrate and an intrinsic base above the collector. Then, the invention patterns an emitter pedestal for the lower portion of the emitter on the substrate above the intrinsic base. Before actually forming the emitter or associates spacer, the invention forms an extrinsic base in regions of the substrate not protected by the emitter pedestal. After this, the invention removes the emitter pedestal and eventually forms the emitter where the emitter pedestal was positioned.
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Khater Marwan H
Pagette Francois
Blecker, Esq. Ira D.
Chiu Tsz K.
Gibb & Rahman, LLC
International Business Machines - Corporation
Smith Zandra V.
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