Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1993-04-16
1994-07-19
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257588, 257592, H01L 2972, H01L 2904
Patent
active
053311990
ABSTRACT:
A vertical bipolar transistor is constructed with reduced step height by codeposition of a polysilicon base contact member and an epitaxial device layer, thereby placing the base contact below the device surface, and by the use of a doped glass layer as a dopant source for the base contact and as a dopant source to provide a continuous conductive path to the base, and as the dielectric separating the base contact from the emitter contact, and as an etch stop when forming the base implantation aperture.
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Chu Shao-Fu S.
Kim Kyong-Min
Mei Shaw-Ning
Nastasi Victor R.
Ratanaphanyarat Somnuk
International Business Machines - Corporation
Prenty Mark V.
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